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| PROFET(R) BTS 442 E2 Smart Highside Power Switch Features * Overload protection * Current limitation * Short-circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection2) * Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 63 V 4.5 ... 42 V 18 m 21 A 70 A TO-220AB/5 5 5 5 Standard 1 Straight leads 1 SMD Application * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS(R) chip on chip technology. Fully protected by embedded protection functions. R bb + V bb 3 Voltage source Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads OUT 2 IN Temperature sensor 5 Load 4 ST Short circuit detection GND (R) PROFET Load GND 1 Signal GND 1) 2) No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Semiconductor Group 1 04.96 BTS 442 E2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 , RL= 1.1 , td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... Symbol Vbb VLoad dump3) Values 63 80 self-limited -40 ...+150 -55 ...+150 167 2.1 2.0 -0.5 ... +6 5.0 5.0 0.75 75 tbd Unit V V A C W J kV V mA IL Tj Tstg Ptot EAS VESD VIN IIN IST Thermal resistance chip - case: junction - ambient (free air): SMD version, device on pcb4): RthJC RthJA K/W 3) 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 BTS 442 E2 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 5 A Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Tj=25 C: RON Tj=150 C: IL(ISO) IL(GNDhigh) -17 -- 15 28 21 -- 18 35 -1 m A mA s ton toff dV /dton -dV/dtoff 100 10 0.2 0.4 ----- 350 130 2 5 V/s V/s Operating Parameters Tj =-40...+150C: Operating voltage 5) Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Undervoltage restart of charge pump Tj =-40...+150C: see diagram page 12 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150C: Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis 6) Tj =-40C: Overvoltage protection Ibb=40 mA Tj =25...+150C: Tj=-40...+25C: Standby current (pin 3) VIN=0 Tj=150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)7), VIN=5 V Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) 4.5 2.4 ---42 42 -60 63 ----- ---6.5 0.2 --0.2 -67 12 18 6 1.1 42 4.5 4.5 7.5 -52 ---25 60 --- V V V V V V V V V A A mA Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND 5) 6) 7) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 3 BTS 442 E2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions Initial peak short circuit current limit (pin 3 to 5)8), IL(SCp) ( max 400 s if VON > VON(SC) ) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC) min value valid only, if input "low" time exceeds 30 s --45 30 80 -95 -70 -- 140 ---400 A A s V V C K J Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation9), Tj Start = 150 C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 10) Integrated resistor in Vbb line Diagnostic Characteristics Open load detection current (on-condition) VON(CL) VON(SC) Tjt Tjt EAS ELoad12 ELoad24 -Vbb Rbb --150 --- 58 8.3 -10 -- ----2.1 1.7 1.2 32 -- --- -120 V Tj=-40 C: IL (OL) Tj=25..150C: 2 2 --- 1900 1500 mA 8) 9) Short circuit current limit for max. duration of td(SC) max=400 s, prior to shutdown While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx. VON(CL) 2 ), see diagram page 8 EAS= 1/2 * L * IL * ( VON(CL) - Vbb 10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group 4 BTS 442 E2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback11) Input turn-on threshold voltage Tj =-40..+150C: Input turn-off threshold voltage VIN(T+) VIN(T-) VIN(T) IIN(off) 1.5 1.0 -1 10 80 350 --0.5 -25 200 -- 2.4 --30 50 400 1600 V V V A A s s Tj =-40..+150C: Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 3.5 V Status invalid after positive input slope Tj=-40 ... +150C: (short circuit) Status invalid after positive input slope Tj=-40 ... +150C: (open load) Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: ST low voltage Tj =-40...+150C, IST = +1.6 mA: IIN(on) td(ST SC) td(ST) VST(high) VST(low) 5.4 -- 6.1 -- -0.4 V 11) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 5 BTS 442 E2 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 12) Status 442 D2 H H H L H L H H (L13)) L L L14) L14) L L 442 E2 H H H L H L H H (L13)) L L H H H H H L L H H L L L L L L Terms Ibb I IN 2 I ST V V bb R IN VST 4 ST GND 1 GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON Status output +5V R ST(ON) ST GND ESDZD ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 250 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Input circuit (ESD protection) R IN I ESDZDI1 ZDI2 GND I I ZDI1 6.1 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). 12) 13) 14) Power Transistor off, high impedance Low resistance short Vbb to output may be detected by no-load-detection No current sink capability during undervoltage shutdown Semiconductor Group 6 BTS 442 E2 Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high + V bb Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb V ON OUT ON VON Logic unit Short circuit detection OUT Logic unit Open load detection Inductive and overvoltage output clamp + V bb V Z V ON GND disconnect 3 OUT GND 2 IN Vbb PROFET OUT VON clamped to 58 V typ. 4 ST 5 Overvolt. and reverse batt. protection V + V bb GND 1 V GND bb V IN V ST V R IN Z R bb Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. IN Logic V GND disconnect with GND pull up OUT R ST ST GND 3 PROFET 2 IN Vbb PROFET OUT R GND Signal GND 5 Rbb = 120 typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection V V bb 4 ST GND 1 V IN ST V GND Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Semiconductor Group 7 BTS 442 E2 Vbb disconnect with charged inductive load 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT IN 5 PROFET OUT EL GND ER V bb Inductive Load switch-off energy dissipation E bb E AS ELoad = ST bb Energy dissipated in PROFET EAS = Ebb + EL - ER. 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT ELoad < EL, EL = 1/2 * L * I L 2 5 bb Semiconductor Group 8 BTS 442 E2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 442D2 442E2 D X X X X E Overtemperature protection Tj >150 C, latch function15)16) Tj >150 C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.15) (when first turned on after approx. 200 s) Open load detection in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X X X X X -17) X X X X X X X X X X -17) X - Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage Status output type CMOS Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 16) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 17) Low resistance short V to output may be detected by no-load-detection bb 15) Semiconductor Group 9 BTS 442 E2 Timing diagrams Figure 1a: Vbb turn on: IN IN t d(bb IN) V bb ST *) Figure 2b: Switching an inductive load td(ST) V OUT V A OUT ST open drain t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s I L IL(OL) t *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit, IN IN ST ST V OUT V OUT td(SC) I L I L t t td(SC) approx. 200s if Vbb - VOUT > 8.3 V typ. Semiconductor Group 10 BTS 442 E2 Figure 3b: Turn on into overload, IN IN Figure 4a: Overtemperature: Reset if Tj ST V OUT T ST t J t Heating up may require several milliseconds, Vbb - VOUT < 8.3 V typ. Figure 3c: Short circuit while on: Figure 5a: Open load: detection in ON-state, turn on/off to open load IN IN ST ST t d(ST) V OUT V OUT IL I **) t L open t **) current peak approx. 20 s Semiconductor Group 11 BTS 442 E2 Figure 5b: Open load: detection in ON-state, open load occurs in on-state Figure 6b: Undervoltage restart of charge pump VON [V] V on IN VON(CL) off t d(ST OL1) ST t d(ST OL2) V OUT V off bb(over) V I L V V bb(u rst) bb(o rst) normal open normal V t bb(under) bb(u cp) on V bb td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ Vbb [V] charge pump starts at Vbb(ucp) =6.5 V typ. Figure 6a: Undervoltage: IN Figure 7a: Overvoltage: IN V bb V bb(under) Vbb Vbb(u cp) Vbb(u rst) V OUT V ON(CL) Vbb(over) V bb(o rst) V OUT ST open drain ST t t Semiconductor Group 12 BTS 442 E2 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS 442 E2 Ordering code Q67060-S6206-A2 TO-220AB/5, Option E3043 Ordering code BTS 442 E2 E3043 Q67060-S6206-A3 SMD TO-220AB/5, Opt. E3062 Ordering code BTS442E2 E3062A T&R: Q67060-S6206-A4 Semiconductor Group 13 |
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